The two principal technical solutions proposed and realized by the authors of the project Dr. Shubin and Dr. Shushakov in the middle of the 1990s made it possible to solve the ultimate problem of signal detection: analog detection with single-electron sensitivity threshold. The first one is effect of self-calibration of current cord provoked by a single electron in avalanche structure with negative feedback in conditions of above-critical voltage. This effect allows one to realize a single-electron threshold amplifier with high response probability and stable calibrated output signal. The second is utilization of avalanche structure with negative feedback in the above-critical “Geiger” mode and merging output signals emerging from such structure of threshold single electron amplifiers for the purpose of analog signals detection.

Since the beginning of 2000s the research group under supervision of Dr. Shubin develops alternative to conventional SiPMs approach to design of multicell solid-state photomultipliers with wide dynamic range.

The Russian Quantum Center opens a new research direction for DEPHAN analog photodetectors with increased dynamic range, high sensitivity, high speed and low intrinsic noise.

DEPHAN is registered as a company. Start of interaction with the fab.

Key elements of manufacturing technology are set up and refined on top of standard fab processes. Project is presented before Skolkovo Foundation grant committee and wins 3 year grant.

Applications for Patent Cooperation Treaty (PCT) and Russian patents are filed. Technology is proven experimentally: experimental sample is produced with 1х1 mm² surface area, 4.4х10⁴ mm^-2 amplification channels (cells) density and light-sensitive area (fill-factor) of 83%.

Test sample of SSPM DEPHAN is obtained.

Preliminary evaluation of test sample against commercial SSPMs in typical application tasks (LiDAR, Hi-Res PET) displays the potential of new technology in a range of applications. Preliminary data-sheet of the new SSPM is composed based on test sample measurements.

Patent applications are submitted for national phases (USA, Japan, and Europe).

Device construction and main achieved parameters are presented and published on Photonics West 2018.

Threshold sensitivity of DEPHAN device is compared with on-market alternatives, results are presented and published on Photonics Asia 2018.

Manufactured the test samples with enhanced parameters customized on area and spectral response for several applications, as well as the 2×2 matrix prototype.

LiDAR-like setup (rangefinder) comparing DEPHAN and on-market SiPM under the same conditions is built and demonstrated clear advantage of DEPHAN device.

Complete MEMS-based LiDAR is built, demonstrating good range (10s of meters) in daylight conditions on bare detector’s 1 mm² aperture (without any optics).

Amplitude and time resolution of DEPHAN device is compared with on-market alternatives, results are presented and published on SPIE Defense + Commercial Sensing.

Test LiDAR setup is demonstrated on Laser World of Photonics 2019 in Munich.

Test LiDAR setup is demonstrated on ICQT 2019 in Moscow.

Customized test samples and 1D arrays based on feedback from customer evaluation are manufactured.

Research program funded by Skolkovo grant is successfully complete.

DEPHAN technology is exhibited on Commercial UAV Expo 2019 in Las Vegas.